SiC in Sweden
نویسندگان
چکیده
منابع مشابه
3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 μm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray technique...
متن کاملExperimental characterisation of damage in SiC/SiC minicomposites
SiC/SiC composites are studied for their potential use in the next generation of nuclear reactors. A multiscale approach is under development to construct a predictive modelling of their complex damageable mechanical behaviour due to their heterogeneous microstructure. This paper focuses on the damage characterisation of the composite at the scale of the tow at room temperature, both in terms o...
متن کاملDeep Levels in Sic
Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. Much progress has further been achieved in identifying minority charge carrier lifetime limiting defects, which may be attribute...
متن کاملSiC Technology
Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide’s ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applicati...
متن کاملComparison of Cyclic Hysteresis Behavior between Cross-Ply C/SiC and SiC/SiC Ceramic-Matrix Composites
In this paper, the comparison of cyclic hysteresis behavior between cross-ply C/SiC and SiC/SiC ceramic-matrix composites (CMCs) has been investigated. The interface slip between fibers and the matrix existed in the matrix cracking mode 3 and mode 5, in which matrix cracking and interface debonding occurred in the 0° plies are considered as the major reason for hysteresis loops of cross-ply CMC...
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ژورنال
عنوان ژورنال: III-Vs Review
سال: 1995
ISSN: 0961-1290
DOI: 10.1016/0961-1290(95)80156-1